English to Turkish Tech/Engineering Electronics / Elect Eng

Advantageously, each dielectric layer having a barrier function is separated from a functional layer by at least one dielectric layer having a stabilizing function.
This dielectric layer having a stabilizing function can have a thickness of at least 4 nm, in particular a thickness of between 4 and 10 nm and better still of 8 to 10 nm.
The stack of thin layers can optionally comprise a smoothing layer.

Smoothing layer is understood to mean a layer, the function of which is to promote the growth of the stabilizing layer along a preferred crystallographic orientation which promotes the crystallization of the silver layer by epitaxy phenomena.

The smoothing layer is located below and preferably in contact with a stabilizing layer.

The smoothing layer based on a mixed oxide can be described as "noncrystalline" in the sense that it can be completely amorphous or partially amorphous and thus partially crystalline, but that it cannot be completely crystalline, over the whole of its thickness.