Jun 24, 2006 12:56
17 yrs ago
English term
tantalum pentaethoxide
English to Chinese
Tech/Engineering
Chemistry; Chem Sci/Eng
Chemistry
化学品
Proposed translations
(Chinese)
| 3 +2 | 五乙氧基鉭 |
Naikei Wong
|
| 3 | tantalum pentoxide? |
chica nueva
|
Proposed translations
+2
18 mins
Naikei Wong
Native in English
&
Chinese
Specializes in field
Best quality to match best science
Native in: English 
, Chinese
Works in: Chinese to English, English to Chinese, Japanese to English, and 1 more.
Related KudoZ points
:
58
Selected
五乙氧基鉭
FYI:
http://www.google.com/search?hl=en&lr=&q="五乙氧基钽"
五乙氧基鉭>99.98% - [ Translate this page ][ 簡體 ]
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www.zxqc.cn/finddate/ptshow.php?number=239866 - 4k - Supplemental Result - Cached - Similar pages
上海集成電路行業協會 - [ Translate this page ][ 簡體 ]
高介電常數薄膜則是未來深次微米電容器之理想材料 可以五乙氧基鉭 Ｔａ ＯＣ２Ｈ５） 經由ＬＰＣＶＤ反應形成Ｔａ２Ｏ５來成長。 ３．７．３ 塗佈薄膜 ...
www.sica.org.cn/news/hkItem.Aspx?id=468 - 1024k - Cached - Similar pages
http://www.google.com/search?hl=en&lr=&q="五乙氧基钽"
五乙氧基鉭>99.98% - [ Translate this page ][ 簡體 ]
五乙氧基鉭>99.98% ... 中西器材大全. 62965544.com midwest.com.cn • zxqc.cn midwest-g.com. 五乙氧基鉭>99.98% 型號:NDY14WY ...
www.zxqc.cn/finddate/ptshow.php?number=239866 - 4k - Supplemental Result - Cached - Similar pages
上海集成電路行業協會 - [ Translate this page ][ 簡體 ]
高介電常數薄膜則是未來深次微米電容器之理想材料 可以五乙氧基鉭 Ｔａ ＯＣ２Ｈ５） 經由ＬＰＣＶＤ反應形成Ｔａ２Ｏ５來成長。 ３．７．３ 塗佈薄膜 ...
www.sica.org.cn/news/hkItem.Aspx?id=468 - 1024k - Cached - Similar pages
4 KudoZ points awarded for this answer.
19 hrs
chica nueva
Native in English
http://youtube/iraVWQu3Zf8
Native in: English (Variants: British, New Zealand)
Works in: Chinese to English
Related KudoZ points
:
11
tantalum pentoxide?
五氧化二钽--万维化工五氧化二钽市场 - [ Translate this page ]清空全部选择. 1, 直接到第 页. 共1 条信息, 当前显示第1-1 条, 共1 页. 产品名称, 五氧化二钽. 英文名, Tantalic acid anhydride;Tantalum oxide;Tantalum pentoxide. CA登记号, 1314-61-0. 别名. 分子式, Ta2O5. 用途, 用作制造金属钽的原料，也.. ...
www.chem.com.cn/jysc2/chemgqlist.asp?query_ key=products&wish=%CE%E5%D1%F5%BB%AF%B6%FE%EE%E3 - 27k - Cached - Similar pages
中国工程咨询网/行业规范/FIDIC专栏 - [ Translate this page ]83 GB/T 3283-1987 五氧化二钒Vanadium pentoxide 84 GB/T 3460-1982 钼酸铵技术 条件technical requirements of ammonium molybdate ... 212 GB/T 10577-1989 高纯五 氧化二钽High-pure Tantalum pentaoxide 213 GB/T 10578-1989 高纯五氧化二铌High-pure ...
www.cnaec.com.cn/guifan/02/H60-69.htm - 38k - Supplemental Result - Cached - Similar pages
化学物质毒性数据库 - [ Translate this page ]英文名称, TANTALUM PENTOXIDE. 英文别名, TANTALUM OXIDE. 中文名称, 五氧化二钽(一 种制造光学薄膜和电子元件原料). 中文别名, 氧化钽. 分子式, O5-TA2. 分子量, 441.90. 类别, 有毒物质. 比重, 8.2. 熔点, 1872℃. 沸点. 蒸汽压. 蒸汽密度. 刺激数据 ...
www.toxic.csdb.cn/ viewRecord.jsp?ds=dataset@@10021&tab=CHH&id=28578 - 13k - Supplemental Result - Cached - Similar pages
上海翻译公司|上海翻訳会社|China Translation Company|Shanghai OTO ... - [ Translate this page ]Sulfur Dioxide, 二氧化硫. Sulfur Hexafluoride, 六氟化硫. Sulfur Pentafluoride, 五氟化硫. Sulfur Tetrafluoride, 四氟化硫. Sulfuric Acid, 硫酸. Sulfuryl Fluoride, 氟化硫酰. Tantalum Pentoxide, 五氧化二钽. Tantalum,Dust, 钽( 粉尘) ...
www.otoshanghai.com/newsindex.asp?ArticleID=59 - 56k - Supplemental Result - Cached - Similar pages
标准动态详细内容 - [ Translate this page ]标准名称(中文), 五氧化二钽技术条件. 标准行业类别. 中标分类号, H71. 发布日期. 实施日期, 1984-02-01. 替代标准, 调整为YS/T 427-2000. 是否作废, 作废. 作废日期. 页数, 2. 标准名称(英文), Technical requirements of tantalum pentoxide. ICS分类号 ...
www.cnzjqi.com/literature/ details.html?cnstdid=GB/T%203626-1983 - 4k - Supplemental Result - Cached - Similar pages
--------------------------------------------------
Note added at 19 hrs (2006-06-25 08:21:24 GMT) Post-grading
--------------------------------------------------
tantalum pentaethoxide is a precursor, different to tantalum pentoxide:
Methods of forming dielectric layers and methods of forming ...chemical vapor depositing a dielectric layer comprising tantalum pentoxide within the reactor and dislodging at least ... precursors including tantalum pentaethoxide (TAETO) or tantalum tetraethoxide dimethylaminoethoxide (TAT-DMAE), ...
www.freepatentsonline.com/6787477.html - 40k - Cached - Similar pages
Apparatus and method for use in manufacturing a semiconductor ...During the deposition process of the tantalum oxide film, carbon included in the precursor, ie, tantalum pentaethoxide (Ta(OC2H5)5) may be introduced into tantalum pentoxide film and, when the amount of the carbon in the film exceeds a ...
www.freepatentsonline.com/7033937.html - 65k - Cached - Similar pages
[ More results from www.freepatentsonline.com ]
--------------------------------------------------
Note added at 19 hrs (2006-06-25 08:23:07 GMT) Post-grading
--------------------------------------------------
五乙氧基钽 Ｔａ ＯＣ２Ｈ５ - correct.
www.chem.com.cn/jysc2/chemgqlist.asp?query_ key=products&wish=%CE%E5%D1%F5%BB%AF%B6%FE%EE%E3 - 27k - Cached - Similar pages
中国工程咨询网/行业规范/FIDIC专栏 - [ Translate this page ]83 GB/T 3283-1987 五氧化二钒Vanadium pentoxide 84 GB/T 3460-1982 钼酸铵技术 条件technical requirements of ammonium molybdate ... 212 GB/T 10577-1989 高纯五 氧化二钽High-pure Tantalum pentaoxide 213 GB/T 10578-1989 高纯五氧化二铌High-pure ...
www.cnaec.com.cn/guifan/02/H60-69.htm - 38k - Supplemental Result - Cached - Similar pages
化学物质毒性数据库 - [ Translate this page ]英文名称, TANTALUM PENTOXIDE. 英文别名, TANTALUM OXIDE. 中文名称, 五氧化二钽(一 种制造光学薄膜和电子元件原料). 中文别名, 氧化钽. 分子式, O5-TA2. 分子量, 441.90. 类别, 有毒物质. 比重, 8.2. 熔点, 1872℃. 沸点. 蒸汽压. 蒸汽密度. 刺激数据 ...
www.toxic.csdb.cn/ viewRecord.jsp?ds=dataset@@10021&tab=CHH&id=28578 - 13k - Supplemental Result - Cached - Similar pages
上海翻译公司|上海翻訳会社|China Translation Company|Shanghai OTO ... - [ Translate this page ]Sulfur Dioxide, 二氧化硫. Sulfur Hexafluoride, 六氟化硫. Sulfur Pentafluoride, 五氟化硫. Sulfur Tetrafluoride, 四氟化硫. Sulfuric Acid, 硫酸. Sulfuryl Fluoride, 氟化硫酰. Tantalum Pentoxide, 五氧化二钽. Tantalum,Dust, 钽( 粉尘) ...
www.otoshanghai.com/newsindex.asp?ArticleID=59 - 56k - Supplemental Result - Cached - Similar pages
标准动态详细内容 - [ Translate this page ]标准名称(中文), 五氧化二钽技术条件. 标准行业类别. 中标分类号, H71. 发布日期. 实施日期, 1984-02-01. 替代标准, 调整为YS/T 427-2000. 是否作废, 作废. 作废日期. 页数, 2. 标准名称(英文), Technical requirements of tantalum pentoxide. ICS分类号 ...
www.cnzjqi.com/literature/ details.html?cnstdid=GB/T%203626-1983 - 4k - Supplemental Result - Cached - Similar pages
--------------------------------------------------
Note added at 19 hrs (2006-06-25 08:21:24 GMT) Post-grading
--------------------------------------------------
tantalum pentaethoxide is a precursor, different to tantalum pentoxide:
Methods of forming dielectric layers and methods of forming ...chemical vapor depositing a dielectric layer comprising tantalum pentoxide within the reactor and dislodging at least ... precursors including tantalum pentaethoxide (TAETO) or tantalum tetraethoxide dimethylaminoethoxide (TAT-DMAE), ...
www.freepatentsonline.com/6787477.html - 40k - Cached - Similar pages
Apparatus and method for use in manufacturing a semiconductor ...During the deposition process of the tantalum oxide film, carbon included in the precursor, ie, tantalum pentaethoxide (Ta(OC2H5)5) may be introduced into tantalum pentoxide film and, when the amount of the carbon in the film exceeds a ...
www.freepatentsonline.com/7033937.html - 65k - Cached - Similar pages
[ More results from www.freepatentsonline.com ]
--------------------------------------------------
Note added at 19 hrs (2006-06-25 08:23:07 GMT) Post-grading
--------------------------------------------------
五乙氧基钽 Ｔａ ＯＣ２Ｈ５ - correct.
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